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SUM110N06-3m9H
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V (BR)DSS (V) r DS(on) ( Ω )
60 0.0039 at V GS = 10 V
I D (A)
110 a
Q g (Typ)
200
FEATURES
? TrenchFET ? Power MOSFET
? 175 °C Junction Temperature
? Low Thermal Resistance Package
RoHS
COMPLIANT
?
?
High Threshold Voltage At High Temperature
100 % R g Tested
D
TO-26 3
G
G
D S
Top View
Orderin g Information: S UM110N06- 3 m9H-E 3 (Le a d (P b )-free)
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
S
N-Ch a nnel MO S FET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
60
± 20
Unit
V
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 125 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C d
I D
I DM
I AS
E AS
P D
T J , T stg
110 a
110 a
440
70
245
375 c
3.75
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
PCB Mount
Junction-to-Ambient
Junction-to-Case (Drain)
d
R thJA
R thJC
40
0.4
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
www.vishay.com
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